ON Semiconductor NTNS3A65PZT5G

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

45mOhm @ 3.2A, 4.5V

Series

-

Power Dissipation (Max)

400mW (Ta), 8.33W (Tc)

FET Type

N-Channel

Supplier Device Package

DFN1010D-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

11.6nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

556pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-XDFN Exposed Pad

Vgs(th) (Max) @ Id

900mV @ 250µA