ON Semiconductor NTMFS4C35NT3G

Product Details

Rds On (Max) @ Id, Vgs

1Ohm @ 1.5A, 10V

Series

CoolMOS™ CE

Power Dissipation (Max)

68W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO251-3-342

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

15.3nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

328pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.2A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Vgs(th) (Max) @ Id

3.5V @ 200µA

Operating Temperature

-55°C ~ 150°C (TJ)