ON Semiconductor NTMFS4C09NT3G

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

13V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

3.5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

950mOhm @ 1.2A, 13V

Series

CoolMOS™ CE

Power Dissipation (Max)

53W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO251-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

231pF @ 100V