ON Semiconductor NTHL110N65S3F

Product Details

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-220-3 Full Pack

Base Part Number

STP11N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-

Series

FDmesh™

Rds On (Max) @ Id, Vgs

450mOhm @ 5.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

35W (Tc)

Packaging

Tube

Supplier Device Package

TO-220FP

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V