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ON Semiconductor NTD5867NLT4G
MOSFET N-CH 60V 20A DPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 1937
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 61mOhm @ 2.5A, 10V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 5W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 6-TSOP
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 12.5nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 975pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.9A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA