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ON Semiconductor NTD4960N-35G
MOSFET N-CH 30V 11.1A IPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 312pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.6A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.6Ohm @ 1.2A, 10V
- Series
- -
- Power Dissipation (Max)
- 61W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DPAK
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V