ON Semiconductor NTD4905N-35G

Product Details

Packaging

Tube

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 78A (Tc)

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

5.7mOhm @ 30A, 10V

Power Dissipation (Max)

-

Series

-

Supplier Device Package

I-PAK

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V