ON Semiconductor NTD3055L170T4G

Product Details

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.7A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Vgs(th) (Max) @ Id

700mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

35mOhm @ 3.8A, 4.5V

Series

HEXFET®

Power Dissipation (Max)

1.8W (Ta)

FET Type

N-Channel

Supplier Device Package

Micro8™

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V