Images are for reference only. See Product Specifications for product details
ON Semiconductor NTD18N06-001
MOSFET N-CH 60V 18A IPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.7A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 5.2A, 10V
- Series
- -
- Power Dissipation (Max)
- 1.56W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SOT-223
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 950pF @ 25V