ON Semiconductor NTBV30N20T4G

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

45A (Ta)

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-

Rds On (Max) @ Id, Vgs

28mOhm @ 22.5A, 5V

Power Dissipation (Max)

2.4W (Ta), 125W (Tj)

Series

-

Supplier Device Package

D2PAK

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

60V