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ON Semiconductor NTB6413ANG

MOSFET N-CH 100V 42A D2PAK

Manufacturer
ON Semiconductor
Datasheet
Price
0
Stock
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Product Details

Power Dissipation (Max)
1.28W (Ta), 50W (Tc)
Series
-
Supplier Device Package
I-PAK
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
21.8nC @ 10V
Packaging
Tube
Drain to Source Voltage (Vdss)
25V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1308pF @ 12V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
10.4A (Ta), 65A (Tc)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 30A, 10V