ON Semiconductor NTB125N02RT4G

Product Details

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

8.2mOhm @ 30A, 10V

Series

-

Power Dissipation (Max)

1.04W (Ta), 62.5W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB