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ON Semiconductor NDS335N
MOSFET N-CH 20V 1.7A SSOT3
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 4.3A, 4.5V
- Series
- FETKY™
- Power Dissipation (Max)
- 1.25W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- Micro8™
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1066pF @ 10V
- FET Feature
- Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C
- 4.3A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA