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ON Semiconductor NDDL01N60Z-1G
MOSFET N-CH 600V 0.8A IPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 15V, 50A
- Series
- -
- Power Dissipation (Max)
- 2.1W (Ta), 200W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 95nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6950pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 180A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V, 15V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3