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ON Semiconductor NDC631N
MOSFET N-CH 20V 4.1A SSOT-6
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 390mA, 5V
- Series
- -
- Power Dissipation (Max)
- 1.8W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-223-4
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 240pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 770mA (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount