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ON Semiconductor IRFW630BTM-FP001
MOSFET N-CH 200V 9A D2PAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.58
- Stock
- 0
Product Details
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.2W (Ta), 18W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- MG-WDSON-2, CanPAK M™
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 6nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 75V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 390pF @ 37.5V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Ta), 15A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 7V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-WDSON
- Vgs(th) (Max) @ Id
- 3.5V @ 8µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 8A, 10V