ON Semiconductor FQPF6N90C

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

900V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-251-3 Long Leads, IPak, TO-251AB

Base Part Number

STU6N

Vgs(th) (Max) @ Id

5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

MDmesh™ K5

Rds On (Max) @ Id, Vgs

1.1Ohm @ 3A, 10V

FET Type

N-Channel

Power Dissipation (Max)

110W (Tc)

Packaging

Tube

Supplier Device Package

IPAK (TO-251)