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ON Semiconductor FQPF3N90
MOSFET N-CH 900V 2.1A TO-220F
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- UltraFET™
- Power Dissipation (Max)
- 110W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252AA
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 70nC @ 20V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1080pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 18A, 10V