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ON Semiconductor FQP8N80C

MOSFET N-CH 800V 8A TO-220

Manufacturer
ON Semiconductor
Datasheet
Price
2.51
Stock
1663

Product Details

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
60nC @ 5V
Vgs (Max)
±16V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-65°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
20mOhm @ 24A, 10V
Series
-
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220-3