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ON Semiconductor FQP2N60C
MOSFET N-CH 600V 2A TO-220
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 1.2
- Stock
- 12609
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 6.6A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 41W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB Full-Pak
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 640pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 12A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V