ON Semiconductor FQP17N40

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

13200pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

-

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5.8mOhm @ 50A, 10V

Series

-

Power Dissipation (Max)

90W (Tc)

FET Type

P-Channel

Supplier Device Package

D²PAK (TO-263)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V