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ON Semiconductor FQP13N10L
MOSFET N-CH 100V 12.8A TO-220
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 1.16
- Stock
- 2388
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 8.3W (Ta), 136W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- TO-252, (D-Pak)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 160nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 80V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4700pF @ 40V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25.2mOhm @ 12.5A, 10V