ON Semiconductor FQI5N60CTU

Product Details

FET Type

P-Channel

Supplier Device Package

DPAK+

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

+10V, -20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3V @ 1mA

Operating Temperature

175°C (TJ)

Rds On (Max) @ Id, Vgs

44mOhm @ 5A, 10V

Series

U-MOSVI

Power Dissipation (Max)

27W (Tc)