ON Semiconductor FQI3P50TU

Product Details

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

200mOhm @ 7.5A, 10V

Series

QFET®

Power Dissipation (Max)

3.75W (Ta), 100W (Tc)

FET Type

P-Channel

Supplier Device Package

D²PAK (TO-263AB)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

120V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA