ON Semiconductor FQD6N25TM

Product Details

Vgs(th) (Max) @ Id

3V @ 1.01mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

10mOhm @ 70A, 10V

Series

-

Power Dissipation (Max)

2W (Ta), 19W (Tc)

FET Type

N-Channel

Supplier Device Package

HSSO8-F1-B

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1092pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 19A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerSMD, Flat Leads