ON Semiconductor FQD4P25TM-WS

Product Details

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

7.9mOhm @ 15A, 10V

Series

NexFET™

Power Dissipation (Max)

74W (Tc)

FET Type

N-Channel

Supplier Device Package

8-VSONP (5x6)

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 20V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

89A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Part Status

Active

Mounting Type

Surface Mount