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ON Semiconductor FQD4N25TM-WS
MOSFET N-CH 250V 3A DPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 449
Product Details
- Series
- U-MOSVI
- Power Dissipation (Max)
- 1.2W (Ta)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 9.8nC @ 4.5V
- Packaging
- Cut Tape (CT)
- Drain to Source Voltage (Vdss)
- 20V
- Vgs (Max)
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds
- 870pF @ 10V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 5A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 8.5V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 6-UFBGA, WLCSP
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA, 3V
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 31mOhm @ 3A, 8.5V