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ON Semiconductor FQD2N90TM
MOSFET N-CH 900V 1.7A DPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 11889
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.6A (Ta), 16.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 9.6A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 2.1W (Ta), 31W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-MLP (3.3x3.3), Power33
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1230pF @ 15V