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ON Semiconductor FQD2N60CTM-WS
MOSFET N-CH 600V 1.9A
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13mOhm @ 10A, 10V
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PowerDI3333-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 68.6nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3426pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10.3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V