ON Semiconductor FQD13N10TM

Product Details

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

105mOhm @ 2.4A, 4.5V

Series

-

Power Dissipation (Max)

1.25W (Ta)

FET Type

P-Channel

Supplier Device Package

8-TSST

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 4.5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 10V

FET Feature

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead