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ON Semiconductor FQD13N06TM
MOSFET N-CH 60V 10A DPAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 2124
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 32.4mOhm @ 3A, 4.5V
- Series
- U-MOSVI
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 6-UDFNB (2x2)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 12.8nC @ 10V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 840pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V