ON Semiconductor FQD10N20LTM

Product Details

Rds On (Max) @ Id, Vgs

160mOhm @ 10A, 10V

Series

UltraFET™

Power Dissipation (Max)

49W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-252AA

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

425pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)