ON Semiconductor FQB5N60CTM-WS

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

9950pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8.5mOhm @ 25A, 10V

Series

TrenchFET®

Power Dissipation (Max)

107W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-263 (D2Pak)