Images are for reference only. See Product Specifications for product details
ON Semiconductor FQB3N90TM
MOSFET N-CH 900V 3.6A D2PAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 3.6Ohm @ 1.1A, 10V
- Series
- QFET®
- Power Dissipation (Max)
- 43W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220F
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 880pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.2A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)