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ON Semiconductor FQB27P06TM
MOSFET P-CH 60V 27A D2PAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 5112
Product Details
- Vgs(th) (Max) @ Id
- 3.9V @ 150µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 132A, 10V
- Series
- HEXFET®, StrongIRFET™
- Power Dissipation (Max)
- 96W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DirectFET™ Isometric ME
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 185nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6680pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 217A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric ME