ON Semiconductor FQB27N25TM-F085

Product Details

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

0.72mOhm @ 50A, 10V

Power Dissipation (Max)

5W (Ta), 294.6W (Tc)

Series

Automotive, AEC-Q101

Supplier Device Package

8-DFNW (8.3x8.4)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

11535pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

60.5A (Ta), 464A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V