ON Semiconductor FQB22P10TM-F085

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

4-UFBGA, DSBGA

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

82mOhm @ 500mA, 4.5V

Series

NexFET™

Power Dissipation (Max)

1W (Ta)

FET Type

P-Channel

Supplier Device Package

4-DSBGA (1x1)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

2.4nC @ 4.5V

Vgs (Max)

-6V

Drain to Source Voltage (Vdss)

12V