ON Semiconductor FQB11N40TM

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

19mOhm @ 60A, 10V

Series

UltraFET™

Power Dissipation (Max)

145W (Tc)

FET Type

N-Channel

Supplier Device Package

D²PAK (TO-263AB)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

85nC @ 20V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

55V