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ON Semiconductor FQA7N80C-F109
MOSFET N-CH 800V 7A TO-3P
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 2.83
- Stock
- 428
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.6W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 17A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 600mV @ 250µA (Min)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 25A, 4.5V