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ON Semiconductor FQA170N06

MOSFET N-CH 60V 170A TO-3P

Manufacturer
ON Semiconductor
Datasheet
Price
6.74
Stock
339

Product Details

Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Series
-
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
800V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)