ON Semiconductor FQA160N08

Product Details

Power Dissipation (Max)

320W (Tc)

Series

HiPerFET™

Supplier Device Package

TO-263AA

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

300V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3.75nF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4.5V @ 1.5mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

27mOhm @ 28A, 10V