ON Semiconductor FDT86102LZ

Product Details

Rds On (Max) @ Id, Vgs

1.05mOhm @ 30A, 10V

Series

OptiMOS™

Power Dissipation (Max)

2.5W (Ta), 96W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TDSON-8-7

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-