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ON Semiconductor FDS86267P
MOSFET P-CH 150V
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 978
Product Details
- Packaging
- Digi-Reel®
- Supplier Device Package
- TO-252AA
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 29nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1350pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 9.9A (Ta), 50A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- FDD13AN06
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- Automotive, AEC-Q101, PowerTrench®
- Rds On (Max) @ Id, Vgs
- 13.5mOhm @ 50A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 115W (Tc)