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ON Semiconductor FDP61N20

MOSFET N-CH 200V 61A TO-220

Manufacturer
ON Semiconductor
Datasheet
Price
2.77
Stock
568

Product Details

Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
14mOhm @ 75A, 10V
Series
UltraFET™
Power Dissipation (Max)
310W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
238nC @ 20V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3790pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
75A (Tc)