ON Semiconductor FDP5N50NZ

Product Details

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

295mOhm @ 6.6A, 10V

Series

HEXFET®

Power Dissipation (Max)

110W (Tc)

FET Type

P-Channel

Supplier Device Package

IPAK (TO-251)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V