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ON Semiconductor FDP4D5N10C
FET ENGR DEV-NOT REL
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 3.81
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 44A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs
- 65mOhm @ 500mA, 10V
- Power Dissipation (Max)
- 298W (Tc)
- Series
- TrenchP™
- Supplier Device Package
- TO-220AB
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 175nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 150V
- Vgs (Max)
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds
- 13400pF @ 25V