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ON Semiconductor FDMS86320
MOSFET N-CH 80V 10.5A 8-PQFN
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 11A, 10V
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 106W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- LFPAK56, Power-SO8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2.88nF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 67A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)