Images are for reference only. See Product Specifications for product details
ON Semiconductor FDMS3660S-F121
MOSFET 2N-CH 30V 13A/30A 8-PQFN
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 8A, 10V
- Supplier Device Package
- 8-SO
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 10V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1535pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 8A, 15.2A
- Part Status
- Obsolete
- Power - Max
- 1.98W, 4.16W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)