ON Semiconductor FDMC86012

Product Details

Packaging

Tube

Supplier Device Package

I-PAK

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

11.5nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Base Part Number

STU9H

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ M2

Rds On (Max) @ Id, Vgs

820mOhm @ 2.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

60W (Tc)