ON Semiconductor FDMC8296

Product Details

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

7853pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

2.1V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

4.1mOhm @ 25A, 10V

Power Dissipation (Max)

238W (Ta)

Series

TrenchMOS™

Supplier Device Package

LFPAK56, Power-SO8